Meeting
Workshop A:
Villa Conference on Interaction Among Nanostructures
Workshop B:
Villa Conference on Energy and Environmental Research
Workshop C:
Villa Conference on Matamaterials
Workshop D:
Villa Conference on Iron-based Superconductors
Workshop E:
Villa Conference on Complex Oxide Heterostructures
Workshop F:
Villa Conference on Optoelectronic Materials and Devices
Workshop G:
Villa Conference on Plasmonic Materials
Workshop H:
Villa Conference on Topological Insulators
Workshop I:
Submission
Program
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VCTI 2012
The 2012 Villa Conference on Topological Insulators (VCTI 2012) will take place from April 16th to 20th, 2012 at Doubletree by Hilton Orlando at SeaWorld. The villa conference series will continue its success of the 2008 in Orlando Florida, 2009 in St. Thomas U.S. Virgin Islands, 2010 in Santorini Greece, and 2011 in Las Vegas Nevada by providing an interdisciplinary forum for the open communication in understanding the physical, chemical, and biological interactions among nanoscale components and bridging complex oxide materials research and applications with emphasis on emergent phenomena in thin film, interface, surface, superlattice, nanostructures and heterostructures. VCTI is a new development in the series, in response to growing interests in topological insulators among participants of the villa conference series. The Doubletree by Hilton Orlando at SeaWorld is spread across 28 acres of rich tropical landscape in the heart of Orlando, minutes from the destination's most popular attractions. The second to none friendly and stimulating atmosphere will unite international scientists with common professional interests to share both their knowledge of recent developments as well as their ideas about prospective directions and approaches on topological insulators.
Advisory Board
Qi-Kun Xue, Tsinghua University, China
Invited speakers
Chaoxing Liu, The Pennsylvania State University, USA Congjun Wu, University of California, San Diego, USA Detlev Grützmacher, Forschungszentrum Jülich, Germany Dong Qian, Shanghai Jiao Tong University, USA Ewelina Hankiewicz, Universitaet Wuerzburg, Germany Hongbin Zhang, Sun Yat-sen University, China Hongtao Yuan, University of Tokyo, Japan Jainendra Jain, The Pennsylvania State University, USA Jiannong Wang, Hong Kong University of Science and Technology, China Jinfeng Jia, Shanghai Jiao Tong University, China Joan Redwing, The Pennsylvania State University, USA Joe Checkelsky, RIKEN institute, Japan Kang L. Wang, University of California, Los Angeles, USA Ke He, Institute of Physics, CAS, China Laurens Molenkamp, Universitaet Wuerzburg Am Hubland, Germany Mingliang Tian, High Magnetic Field Laboratory, CAS, China M. Zahid Hasan, Princeton University, USA Mohammad Hafezi, National Institute of Standards and Technology, USA N. Peter Armitage, The Johns Hopkins University, USA Nitin Samarth, Penn State University, USA Qi Li, The Pennsylvania State University, USA Takao Sasagawa, Tokyo Institute of Technology, Japan Vidya Madhavan, Boston College, USA Xiaoliang Qi, Standford University, USA Xuan Gao, Case Western Reserve University, USA Yasuhiro Hatsugai, University of Tsukuba, Japan Yongqing Li, Institute of Physics, CAS, China Yulin Chen, University of Oxford, United Kingdom Zhi-Xun Shen, Stanford University, USA
Co-chair
Jian Wang, Peking University, China |
